Silicon nanowires (Si NWs) are potential building blocks for semiconductor nanodevices and circuits. 1 To fabricate NW devices it is necessary to find ways of controlled doping ( p or n ) including specific concentration profiles. In situ p doping of Si NWs with boron has already been demonstrated by different techniques 2–4 where the …
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To further study the influence of the boron doping amount and the state in the carbon material, X-ray photoelectron spectroscopy (XPS) measurements were carried out. ... The nitrogen content of the resulting carbon can be controlled in the range of 0-10 at. % and all prepd. samples have well-ordered mesopores with diams. of 3.4-4.0 nm ...
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A single electron at a nitrogen-vacancy can be controlled by radio waves and it behaves like a qubit, useful for quantum memories [10]. In the case of boron doping, a p-type semiconductor can be obtained. Due to its small atomic size, boron easily incorporates into the diamond lattice [11].
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Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) are promising candidates for quantum light generation. Despite this, techniques to control the formation of hBN SPEs down to the monolayer limit are yet to be demonstrated. Recent experimental and theoretical investigations have suggested that the visible wavelength single-photon …
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X-ray photoemission spectroscopy results show that boron is mainly present as oxygen-containing (C–O–B) and oxygen-free (C–B) boron in the sp 2 carbon framework, so different levels of pre-oxidation treatments can control the content of oxygen-containing boron species and thus achieve controlled doping of boron species. Electrochemical ...
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Boron-doped polycyclic aromatic hydrocarbons (B-PAHs) have interesting optoelectronic properties as the electron-deficient boron centre stabilizes the lowest unoccupied …
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In situ p doping of Si NWs with boron has already been demonstrated by different techniques2–4 where the dopants were incorporated from a gas diborane or trimethyl boron average of 170 nm and the length from 100 to 300 nm with. However, in most of the cases the achieved range of B con-centration was rather narrow. Furthermore, the above doping
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This study used a spatially controlled boron-doping technique that enables a p-n junction diode to be realized within a single 2D black phosphorus (BP) nanosheet for high-performance photovoltaic application. The reliability of the BP surface and state-of-the-art 2D p-n heterostructure's gated junctions was obtained using the controllable ...
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Published: 21 January 2020 Boron doping and structure control of carbon materials for supercapacitor application: the effect of freeze-drying and air-drying for porosity …
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Doping diffusion is a process used to introduce precisely controlled impurities into a material to change it's electrical, optical or structural properties. In some cases, these impurities can be introduced uniformly throughout the material during the deposition of the material. In other cases these impurities can be introduced at the …
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Here, a facile template method is utilized to synthesize boron doping carbon nanobubbles (BCNBs). The incorporation of boron into the carbon structure introduces abundant defective sites and improves conductivity, facilitating both the intercalation-controlled and capacitive-controlled capacities.
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Doping. Controlled doping of ND with foreign atoms is an important technological goal. As mentioned previously, these dopants can provide a number of useful benefits, such as fluorescence in the case of Nitrogen and p-type conductivity in the case of Boron. In principle, n-type conductivity associated with doping with phosphorous …
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Controlled boron doping of diamond film using nontoxic reagents is a challenge in itself. During the present study, attempts have been made to dope diamond films in situ with boron from a solution of boric acid (H3BO3) in methanol (CH3OH) using a specially designed bubbler that ensured continuous and controlled flow of vapors of …
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The electrical effect of boron doping was observed in a drastic drop in resistivity from orders of 10 2 to the 10 −3 Ω.cm. Moreover, we found that an increase in boron doping concentration leads to a higher crystallization rate of non-hydrogenated amorphous silicon thin films prepared by e-Beam EC.
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Theoretical understanding is that Boron doping which has one less electron than Carbon creates a hole, and the Nitrogen doping which has one more electron brings a carrier …
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The boron doping was controlled by adding diborane to the gas phase. We fabricated differently doped BDD sheet samples by varying the [B]/ [C] ratio in the gas phase: undoped (0 ppm), lowly-doped ...
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Here, we report a doping strategy by incorporating light-weight boron into the cathode active material lattice to decrease the irreversible oxygen oxidation at high voltages (i.e., >4.0 V vs. Na+/Na).
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acidity. Boron doping increases the performance of graphene-based devices, such as eld effect transistors,2 Li-ion batteries,3 supercapacitors,4 and solar cells.5 However, despite intensive studies on the chemistry of boron-doped graphene, reliable methods for a controlled boron doping in terms of both doping
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the n-type silicon, that is clearly visible in the SEM image due to the doping contrast. Figure 4: SEM images of boron doped PECVD oxides on alkaline textured n-type silicon.(a) A closed oxide ...
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The boron concentration in the nanowires was measured using secondary ion mass spectrometry and results were compared for boron-doping using TMB and diborane (B2H6) sources.
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Aqueous noncovalent functionalization and controlled near-surface carbon doping of multiwalled boron nitride nanotubes J Am Chem Soc. 2008 Jul 2;130(26):8144-5. doi: 10.1021/ja8020878. Epub 2008 Jun 10. Authors ... an innovative methodology was designed and demonstrated for the controlled near-surface carbon doping of BNNTs. …
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Photolytic degradation of model dyes on pure and boron-doped zinc oxide (ZnO) nanoparticles with pseudohexagonal or elongated spindle-like morphology was investigated. ZnO nanoparticles were prepared by spray-assisted co-precipitation solvothermal synthesis. The bandgap (E g) of pure ZnO was decreased by boron doping. The prepared …
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Here, we present boron-doped graphene nanoribbons (B-GNRs) of widths of N=7, 14 and 21 by on-surface chemical reactions with an employed organoboron precursor. The …
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the doping gas flow on the deposition process was also investigated for various diborane partial pres-sures (10 8–10 3 Torr). For a given temperature, ambient pressure and diborane concentration, the boron coverage of the Si surface and the doping of the crystalline silicon substrate can be controlled by the variation of the deposition time ...
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This system enables to fabricate homogenously boron doped Si thin films. Note that, doping can be realized in a gradual and controlled manner, step by step from a low doping level to heavily doping levels. The e-beam EC-fabricated films are non-hydrogenated and therefore, the solid phase crystallized silicon thin films could be blister …
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The bandgap (E g) of pure ZnO was decreased by boron doping. The prepared nanoparticles were tested for their photocatalytic activity by decomposition of different organic dyes, using phloxine, oxazine and rhodamine as test substances simulating environmental pollutants.
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Controlled in situ boron doping of short silicon nanowires grown by molecular beam epitaxy Pratyush Das Kanungo; Nikolai Zakharov; Jan ; Otwin Breitenstein; Peter …
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Abstract. Boron is a unique element in terms of electron deficiency and acidity. Incorporation of boron atoms into an aromatic carbon framework offers a wide variety of functionality. However, the intrinsic instability of organoboron compounds against moisture and oxygen has delayed the development.
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Silicon is a promising anode material for next generation lithium-ion batteries due to its high capacity and low discharge potential. Commercial silicon anodes are normally integrated with high graphite content to overcome their low electrical conductivity and huge cycling-induced volume change. However, this weakens the high specific capacity …
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The doping process was further optimized by controlling the boron indiffusion from the SOD source to c-Si bulk using an additional diffusion barrier layer that controls the boron doping profile. Poly-Si contact cells with both-side flat surfaces and poly-Si contacts showed a maximum efficiency of 17.5% with V O C of 695 mV when a …
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Abstract. The article surveys the most recent achievements starting with the boron doping mechanism, mainly focused on doping in semiconductor materials such as Si, Ge, graphene, carbon nanotube ...
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Atomically controlled substitutional boron-doping of graphene nanoribbons Shigeki Kawai1,2, Shohei Saito2,3, Shinichiro Osumi3, Shigehiro Yamaguchi3,4,5, Adam S. Foster6, Peter Spijker6 & Ernst Meyer1
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A technique is described for doping a silicon body with boron. The surface to be doped is typically a trench sidewall, to be used as a storage capacitor or for isolation. By providing a silicon dioxide diffusion control layer, and a polysilicon source layer that incorporates the boron, well-controlled boron doping over a wide concentration range can be obtained.
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Theoretical understanding is that Boron doping which has one less electron than Carbon creates a hole, ... The results show that the peculiar transport properties of B-doped ZGNR p–n junctions are controlled by B-doping position and concentration. Section snippets Model and method. We calculate the transport property of the system by the two ...
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The boron doping and vacancy will distribute randomly in the sheet of graphene, and the concentration is defined as c defect = N B (N vac)/N C, where N B, N vac, and N C are the number of the boron atom, mono-vacancy and carbon atom in the system. The atomic structure of graphene constructed was optimized using a conjugate-gradient …
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1. Introduction Due to the rapidly growing demand for advanced mobile storage devices, including systems such as solid state drives (SSD), recent years have witnessed a …
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